Aqueous Stability of Ga- and N-Polar Gallium NitrideFOSTER, Corey M; COLLAZO, Ramon; SITAR, Zlatko et al.Langmuir. 2013, Vol 29, Num 1, pp 216-220, issn 0743-7463, 5 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Comparison of GaN Schottky barrier and p-n junction photodiodesMAŁACHOWSKI, M; ROGALSKI, A.SPIE proceedings series. 1998, pp 206-213, isbn 0-8194-2726-8Conference Paper

Preparation and characterization of gallium nitride powderTREHAN, J. C; PARASHAR, D. C; RASHMI et al.SPIE proceedings series. 1998, pp 1318-1322, isbn 0-8194-2756-X, 2VolConference Paper

Room-temperature low-threshold surface-stimulated emission by optical pumping from Al_0.Ga_0.9N/GaN double heterostructureAMANO, H; WATANABE, N; KOIDE, N et al.Japanese journal of applied physics. 1993, Vol 32, Num 7B, pp L1000-L1002, issn 0021-4922, 2Article

Optical characterization of AlGaN-GaN-AlGaN quantum wellsKRISHNANKUTTY, S; KOLBAS, R. M; KHAN, M. A et al.Journal of electronic materials. 1992, Vol 21, Num 4, pp 437-440, issn 0361-5235Article

Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article

Growth and luminescence properties of Mg-doped gaN prepared by MOVPEAMANO, H; KITOH, M; HIRAMATSU, K et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1639-1641, issn 0013-4651Article

Electroluminescence from GaN-polymer heterojunctionCHITARA, Basant; LAL, Nidhi; KRUPANIDHI, S. B et al.Journal of luminescence. 2013, Vol 134, issn 0022-2313, p. 447Article

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPEFUJITO, Kenji; KUBO, Shuichi; FUJIMURA, Isao et al.MRS bulletin. 2009, Vol 34, Num 5, pp 313-317, issn 0883-7694, 5 p.Article

Dot pattern epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxyLIU, W. Y; TSAY, J. D; GUO, Y. D et al.Proceedings - Electrochemical Society. 2005, pp 289-295, issn 0161-6374, isbn 1-56677-462-4, 7 p.Conference Paper

Photoluminescence investigation of ferromagnetic Ga_1―xMn_xN layers with GaN templates grown on sapphire (0 0 0 1) substratesYOON, I. T; HAM, M. H; MYOUNG, J. M et al.Applied surface science. 2009, Vol 255, Num 9, pp 4840-4843, issn 0169-4332, 4 p.Article

Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

Determination of the dielectric constant of GaN in the kHz frequency rangeKANE, M. J; UREN, M. J; WALLIS, D. J et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085006.1-085006.3Article

New simple synthesis route of GaN powders from gallium oxyhydroxideCHO, Sungryong; LEE, Jongwon; IN YONG PARK et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 3, pp 275-278, issn 0921-5107Article

Prospects for nitride vertical-cavity surface-emitting lasersMACKOWIAK, P; NAKWASKI, W.SPIE proceedings series. 1998, pp 331-334, isbn 0-8194-2949-XConference Paper

Theoretical study on In_xGa_1-xN/S hetero-junction solar cellsJIANGONG LI; FUBIN LI; SHUO LIN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7409, issn 0277-786X, isbn 978-0-8194-7699-9 0-8194-7699-4, 1Vol, 740910.1-740910.9Conference Paper

Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (111) platform-based devicesSANG CHOONKO; MIN, Byoung-Gue; PARK, Young-Rak et al.Journal of micromechanics and microengineering (Print). 2013, Vol 23, Num 3, issn 0960-1317, 035011.1-035011.7Article

Temperature dependences of In_xGa_1―xN multiple quantum well solar cellsJENG, Ming-Jer; LEE, Yu-Lin; CHANG, Liann-Be et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 10, issn 0022-3727, 105101.1-105101.6Article

Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shiftsKRISHNANKUTTY, S; KOLBAS, R. M; KHAN, M. A et al.Journal of electronic materials. 1992, Vol 21, Num 6, pp 609-612, issn 0361-5235Article

Single intermediate-band solar cells of InGaN/InN quantum dot supracrystalsQIUBO ZHANG; WENSHENG WEI.Applied physics. A, Materials science & processing (Print). 2013, Vol 113, Num 1, pp 75-82, issn 0947-8396, 8 p.Article

Effect of gas ambient and varying RF sputtering power for bandgap narrowing of mixed (ZnO:GaN) thin films for solar driven hydrogen productionSHET, Sudhakar; YANFA YANG; TURNER, John et al.Journal of power sources. 2013, Vol 232, pp 74-78, issn 0378-7753, 5 p.Article

DNA-sensor based on AIGaN/GaN high electron mobility transistorSCHWARZ, Stefan U; LINKOHR, Stefanie; LORENZ, Pierre et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1626-1629, issn 1862-6300, 4 p.Article

Nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single-crystal n⁺-GaN using plasma assisted molecular beam epitaxyZHI ZHENG; SEO, Huichan; LIANG PANG et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 4, pp 951-954, issn 1862-6300, 4 p.Article

AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxyRAMAN, Ajay; HURNI, Christophe A; SPECK, James S et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 216-220, issn 1862-6300, 5 p.Article